Al doping of 4H-SiC by laser irradiation to coated Al film and its application to junction barrier Schottky diode
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/55/i=4S/a=04ER07/pdf
Reference32 articles.
1. Planar aluminum-implanted 1400 V 4H silicon carbide p-n diodes with low on resistance
2. 2.6 kV 4H-SiC lateral DMOSFETs
3. 700-V asymmetrical 4H-SiC gate turn-off thyristors (GTO's)
4. Status and prospects for SiC power MOSFETs
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1. p-Type carrier concentration enhancement analysis of 4H–SiC by wet chemical laser doping;Materials Science in Semiconductor Processing;2022-06
2. Evaluation of Temperature at SiC Surface During Pulsed Excimer Laser Irradiation;2021 9th International Japan-Africa Conference on Electronics, Communications, and Computations (JAC-ECC);2021-12-13
3. Selective area laser-assisted doping of SiC thin films and blue light electroluminescence;Journal of Physics D: Applied Physics;2019-09-12
4. Formation of low resistance contacts to p-type 4H-SiC using laser doping with an Al thin-film dopant source;Japanese Journal of Applied Physics;2019-05-28
5. Enhanced aluminum doping profile in 4H-SiC by wet-chemical laser doping;14th National Conference on Laser Technology and Optoelectronics (LTO 2019);2019-05-17
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