Three-dimensional imaging of extended defects in 4H-SiC by optical second-harmonic generation and two-photon-excited photoluminescence
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/7/i=2/a=021304/pdf
Reference20 articles.
1. Degradation of hexagonal silicon-carbide-based bipolar devices
2. Electrical characterization of 4H–SiC avalanche photodiodes containing threading edge and screw dislocations
3. The dissociation modes of threading screw dislocations in 4H-SiC
4. Formation of extended defects in 4H-SiC epitaxial growth and development of a fast growth technique
5. Characterization of Screw Dislocations in a 4H-Silicon Carbide Diode Using X-Ray Microbeam Three-Dimensional Topography
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