The dissociation modes of threading screw dislocations in 4H-SiC
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics
Link
http://www.tandfonline.com/doi/pdf/10.1080/09500839.2013.826395
Reference9 articles.
1. Comparison of 6H-SiC, 3C-SiC, and Si for power devices
2. SiC Integrated MOSFETs
3. Analyses of High Leakage Currents in Al+ Implanted 4H SiC pn Diodes Caused by Threading Screw Dislocations
4. Stacking faults created by the combined deflection of threading dislocations of Burgers vector c and c+a during the physical vapor transport growth of 4H–SiC
5. Transmission Electron Microscopy Analysis of a Threading Dislocation with $c+a$ Burgers Vector in 4H-SiC
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Effects of defects in a 4H-SiC material on the breakdown behavior of a Schottky barrier diode;CrystEngComm;2023
2. Two-photon-excited, three-dimensional photoluminescence imaging and dislocation-line analysis of threading dislocations in 4H-SiC;Journal of Applied Physics;2018-09-28
3. X-ray topographical analysis of 4H-SiC epitaxial layers using a forward-transmitted beam under a multiple-beam diffraction condition;Japanese Journal of Applied Physics;2018-08-22
4. Strain energy analysis of screw dislocations in 4H-SiC by molecular dynamics;Japanese Journal of Applied Physics;2016-01-28
5. Threading dislocation with b=c+2a in 4H-SiC as determined by LACBED;Philosophical Magazine Letters;2015-10-03
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