Threading dislocation with b=c+2a in 4H-SiC as determined by LACBED
Author:
Funder
Ministry of Education, Culture, Sports, Science and Technology
Publisher
Informa UK Limited
Subject
Condensed Matter Physics
Link
http://www.tandfonline.com/doi/pdf/10.1080/09500839.2015.1100762
Reference11 articles.
1. Comparison of 6H-SiC, 3C-SiC, and Si for power devices
2. physica status solidi (a)
3. Analyses of High Leakage Currents in Al+ Implanted 4H SiC pn Diodes Caused by Threading Screw Dislocations
4. Stacking faults created by the combined deflection of threading dislocations of Burgers vector c and c+a during the physical vapor transport growth of 4H–SiC
5. Transmission Electron Microscopy Analysis of a Threading Dislocation with $c+a$ Burgers Vector in 4H-SiC
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1. 3D structure of threading screw dislocation at a deep location in 4H-SiC using 3D micro-X-ray topography;Japanese Journal of Applied Physics;2024-01-04
2. Non-destructive identification of edge-component burgers vector of threading dislocations in SiC wafers by birefringence imaging;Diamond and Related Materials;2023-10
3. Three-dimensional micro-X-ray topography using focused sheet-shaped X-ray beam;Scientific Reports;2023-07-31
4. Three-dimensional micro-X-ray topography using focused sheet-shaped X-ray beam;2023-06-05
5. Observation of threading dislocations with a c + m type Burgers vector in HVPE GaN substrates using multi-photon excitation photoluminescence and TEM;Journal of Crystal Growth;2022-08
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