Threading dislocation with b=c+2a in 4H-SiC as determined by LACBED-Reference-Cited by-同舟云学术

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Threading dislocation with b=c+2a in 4H-SiC as determined by LACBED

Published:2015-10-03 Issue:10 Volume:95 Page:489-495
ISSN:0950-0839
Container-title:Philosophical Magazine Letters
language:en
Short-container-title:Philosophical Magazine Letters

Author:

Onda Shoichi,Watanabe Hiroki,Okamoto Takeshi I.,Kondo Hiroyuki,Uehigashi Hideyuki,Saka Hiroyasu

Funder

Ministry of Education, Culture, Sports, Science and Technology

Publisher

Informa UK Limited

Subject

Condensed Matter Physics

Link

http://www.tandfonline.com/doi/pdf/10.1080/09500839.2015.1100762

Reference11 articles.

1. Comparison of 6H-SiC, 3C-SiC, and Si for power devices

2. physica status solidi (a)

3. Analyses of High Leakage Currents in Al⁺ Implanted 4H SiC pn Diodes Caused by Threading Screw Dislocations

4. Stacking faults created by the combined deflection of threading dislocations of Burgers vector c and c+a during the physical vapor transport growth of 4H–SiC

5. Transmission Electron Microscopy Analysis of a Threading Dislocation with $c+a$ Burgers Vector in 4H-SiC

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Discrimination of dislocation in highly doped n-type 4H–SiC by combining electrochemical reaction and molten alkali etching;Materials Science in Semiconductor Processing;2024-12

2. Analysis of local strain fields around individual threading dislocations in GaN substrates by nanobeam x-ray diffraction;Journal of Applied Physics;2024-06-11

3. 3D structure of threading screw dislocation at a deep location in 4H-SiC using 3D micro-X-ray topography;Japanese Journal of Applied Physics;2024-01-04

4. Non-destructive identification of edge-component burgers vector of threading dislocations in SiC wafers by birefringence imaging;Diamond and Related Materials;2023-10

5. Three-dimensional micro-X-ray topography using focused sheet-shaped X-ray beam;Scientific Reports;2023-07-31

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