Discrimination of dislocation in highly doped n-type 4H–SiC by combining electrochemical reaction and molten alkali etching-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Discrimination of dislocation in highly doped n-type 4H–SiC by combining electrochemical reaction and molten alkali etching

Published:2024-12 Issue: Volume:184 Page:108787
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Kong Yafei,Xie Xinyu,Wang Rong,Pi Xiaodong,Yang Deren,Xu Lingmao

Publisher

Elsevier BV

Reference22 articles.

1. Prospects for SiC electronics and sensors;Wright;Mater. Today,2008

2. Review of silicon carbide power devices and their applications;She;IEEE Trans. Ind. Electron.,2017

3. Recent progress in synthesis, properties and potential applications of SiC nanomaterials;Wu;Prog. Mater. Sci.,2015

4. Wet etching of GaN, AIN, and SiC: a review;Zhuang;Mater. Sci. Eng. R Rep.,2005

5. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: a review;Casady;Solid State Electron.,1996

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP