X-ray topographical analysis of 4H-SiC epitaxial layers using a forward-transmitted beam under a multiple-beam diffraction condition
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.7567/JJAP.57.090314/pdf
Reference28 articles.
1. Comparison of 6H-SiC, 3C-SiC, and Si for power devices
2. Present Status and Future Prospect of Widegap Semiconductor High-Power Devices
3. Material science and device physics in SiC technology for high-voltage power devices
4. Fundamentals of Silicon Carbide Technology
5. Aspects of Dislocation Behavior in SiC
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1. Study of dislocations in AlN single-crystal using bright-field synchrotron x-ray topography under a multiple-beam diffraction condition;Applied Physics Letters;2020-08-31
2. РЕНТГЕНОВСКАЯ ДИФРАКЦИОННАЯ ТОПОГРАФИЯ (ОБЗОР);2020-05-22
3. High-resolution X-ray topography of threading edge dislocations in 4H-SiC using a novel nuclear emulsion film improved special resolution and sensitivity;Japanese Journal of Applied Physics;2019-05-03
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