High-resolution X-ray topography of threading edge dislocations in 4H-SiC using a novel nuclear emulsion film improved special resolution and sensitivity-Reference-Cited by-同舟云学术

High-resolution X-ray topography of threading edge dislocations in 4H-SiC using a novel nuclear emulsion film improved special resolution and sensitivity

Published:2019-05-03 Issue:6 Volume:58 Page:060901
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yamaguchi Satoshi,Naganawa Naotaka,Nakamura Mitsuhiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://iopscience.iop.org/article/10.7567/1347-4065/ab1a53/pdf

Reference51 articles.

1. Study of bulk and elementary screw dislocation assisted reverse breakdown in low-voltage (>250 V) 4H-SiC p/sup +/-n junction diodes. I. DC properties

2. Depth Effect of the Morphology Change Induced by Hydrogen Annealing of Grown-in Defects in Silicon

3. Formation of helical dislocations in ammonothermal GaN substrate by heat treatment

4. Transmission Electron Microscopy Analysis of a Threading Dislocation with $c+a$ Burgers Vector in 4H-SiC

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