In situ growth of SiNxas gate dielectric and surface passivation for AlN/GaN heterostructures by metalorganic chemical vapor deposition
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/7/i=9/a=091002/pdf
Reference39 articles.
1. Barrier-Layer Scaling of InAlN/GaN HEMTs
2. Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates
3. 2.3 nm barrier AlN/GaN HEMTs with insulated gates
4. First Reliability Demonstration of Sub-200-nm AlN/GaN-on-Silicon Double-Heterostructure HEMTs for Ka-Band Applications
5. Short-channel effects in subquarter-micrometer-gate HEMTs: simulation and experiment
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1. Improvement of Dynamic On-Resistance in GaN-Based Devices with a High-Quality In Situ SiN Passivation Layer;Micromachines;2023-06-10
2. Effect of in-situ SiNx grown with different carrier gas on structural and electrical properties of GaN-based MISHEMTs;Applied Physics Letters;2023-04-24
3. High Device Performances and Noise Characteristics of AlGaN/GaN HEMTs Using In Situ SiCN and SiN Cap Layer;Nanomaterials;2022-02-14
4. Optimization for the growth condition of in situ SiN x cap layer on ultrathin barrier InAlGaN/GaN heterostructures by metal-organic chemical vapor deposition;Applied Physics Express;2022-01-10
5. Improved Noise and Device Performances of AlGaN/GaN HEMTs with In Situ Silicon Carbon Nitride (SiCN) Cap Layer;Crystals;2021-04-27
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