Effects of layer sequence and postdeposition annealing temperature on performance of La2O3and HfO2multilayer composite oxides on In0.53Ga0.47As for MOS capacitor application-Reference-Cited by-同舟云学术

Effects of layer sequence and postdeposition annealing temperature on performance of La2O3and HfO2multilayer composite oxides on In0.53Ga0.47As for MOS capacitor application

Published:2014-02-13 Issue:3 Volume:7 Page:031201
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Wu Wen-Hao,Lin Yueh-Chin,Chuang Ting-Wei,Chen Yu-Chen,Hou Tzu-Ching,Yao Jing-Neng,Chang Po-Chun,Iwai Hiroshi,Kakushima Kuniyuki,Chang Edward Yi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/7/i=3/a=031201/pdf

Reference21 articles.

1. Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric

2. InGaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectric grown by atomic-layer deposition

3. High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm

4. Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited Al2O3 gate dielectric

5. Electrical characterization of CeO2∕Si interface properties of metal-oxide-semiconductor field-effect transistors with CeO2 gate dielectric

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2. Improved linearity and reliability in GaN metal–oxide–semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2gate dielectric;Japanese Journal of Applied Physics;2016-03-09

3. Study of La-Incorporated HfO2 MIM Structure Fabricated Using PLD System for Analog/Mixed Signal Applications;IEEE Transactions on Nanotechnology;2015-07

4. Control of metamorphic buffer structure and device performance of InxGa1−xAs epitaxial layers fabricated by metal organic chemical vapor deposition;Nanotechnology;2014-11-14