Electrical characterization of CeO2∕Si interface properties of metal-oxide-semiconductor field-effect transistors with CeO2 gate dielectric
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2838746
Reference15 articles.
1. Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's
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3. Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions
4. Thermodynamic stability of binary oxides in contact with silicon
5. Electronic, bonding, and optical properties ofCeO2andCe2O3from first principles
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