Investigation of concurrent flow of nitrogen and oxygen for the oxidation of cerium to cerium oxide films
Author:
Funder
Ministry of Higher Education Malaysia for Fundamental Research Grant Scheme
Publisher
Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1007/s10854-024-12105-6.pdf
Reference44 articles.
1. A. Rao, J. Dsa, S. Goyal, B.R. Singh, Stress induced degradation in sputtered ZrO2 thin films on silicon for nano-MOSFET’s, in Physics of Semiconductor Devices. ed. by V. Jain, A. Verma (Springer, Cham, 2014). https://doi.org/10.1007/978-3-319-03002-9_139
2. G.D. Wilk, R.M. Wallace, J.M. Anthony, High-κ gate dielectrics: current status and materials properties considerations. J. Appl. Phys. 89, 5243–5275 (2001)
3. J. Robertson, High dielectric constant gate oxides for metal oxide Si transistors. Rep. Prog. Phys. 69, 327–396 (2005)
4. C.-H. Chen, Y.-K. Fang, S.-F. Ting, W.-T. Hsieh, C.-W. Yang, T.-H. Hsu, M.-C. Yu, T.-L. Lee, S.-C. Chen, C.-H. Yu, M.-S. Liang, Downscaling limit of equivalent oxide thickness in formation of ultrathin gate dielectric by thermal-enhanced remote plasma nitridation. IEEE Trans. Electron. Devices. 49, 840–846 (2002)
5. J.C. Ranuárez, M.J. Deen, C.-H. Chen, A review of gate tunneling current in MOS devices. Microelectron. Reliab. 46, 1939–1956 (2006)
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