Study of La-Incorporated HfO2 MIM Structure Fabricated Using PLD System for Analog/Mixed Signal Applications-Reference-Cited by-同舟云学术

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Study of La-Incorporated HfO2 MIM Structure Fabricated Using PLD System for Analog/Mixed Signal Applications

Published:2015-07 Issue:4 Volume:14 Page:612-618
ISSN:1536-125X
Container-title:IEEE Transactions on Nanotechnology
language:
Short-container-title:IEEE Trans. Nanotechnology

Author:

Srivastava A.,Mangla O.,Gupta V.

Funder

Council for Scientific and Industrial Research

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Computer Science Applications

Link

http://xplorestaging.ieee.org/ielx7/7729/7151757/07084671.pdf?arnumber=7084671

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3. Effect of Al2O3 Seed-Layer on the Dielectric and Electrical Properties of Ultrathin MgO Films Fabricated Using In Situ Atomic Layer Deposition;ACS Applied Materials & Interfaces;2019-07-29

4. Conduction mechanisms of MIM capacitors with ZrO2/SiO2/ZrO2 stacked dielectrics and Ni electrodes;Acta Physica Sinica;2017

5. Samarium Oxide and Samarium Oxynitride Thin Film as Alternative Gate Oxide on Silicon Substrate;Reference Module in Materials Science and Materials Engineering;2017

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