Characterization of GaN Nanowall Network and Optical Property of InGaN/GaN Quantum Wells by Molecular Beam Epitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference27 articles.
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1. GaN‐Based Deep‐Nano Structures: Break the Efficiency Bottleneck of Conventional Nanoscale Optoelectronics;Advanced Optical Materials;2022-01-08
2. Observation of monochromatic and coherent luminescence from nanocavities of GaN nanowall network;Scientific Reports;2021-04-30
3. Nanostructured p-TiO2/n-GaN heterostructure as a potential photoelectrode for efficient charge separation;Nanotechnology;2018-10-12
4. Heteroepitaxy of Fin-Shaped InGaN Nanoridge Using Molecular Beam Epitaxy;Crystal Growth & Design;2018-09-17
5. Coherent transmission of superconducting carriers through a ∼2 μm polar semiconductor;Superconductor Science and Technology;2018-07-10
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