Proposal of New Polishing Mechanism Based on Feret's Diameter of Contact Area between Polishing Pad and Wafer
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference32 articles.
1. Chemical Mechanical Planarization: Slurry Chemistry, Materials, and Mechanisms
2. Application of Chemical Mechanical Polishing to the Fabrication of VLSI Circuit Interconnections
3. Correlation analysis between pattern and non-pattern wafer for characterization of shallow trench isolation–chemical–mechanical polishing (STI–CMP) process
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4. Experimental In-Situ Observatory on Brownian Motion Behavior of 105 nm Sized Silica Particles During Chemical Mechanical Polishing of 4H-SiC by an Evanescent Field;International Journal of Automation Technology;2024-01-05
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