Correlation analysis between pattern and non-pattern wafer for characterization of shallow trench isolation–chemical–mechanical polishing (STI

Correlation analysis between pattern and non-pattern wafer for characterization of shallow trench isolation–chemical–mechanical polishing (STI–CMP) process

Published:2002-04 Issue:3-4 Volume:60 Page:357-364
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Kim Sang-Yong,Seo Yong-Jin

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. STI process steps for sub-quarter micron CMOS;Sallagoity;Microelectron. Reliab.,1998

2. Shallow trench isolation for sub-0.25 μm IC technologies;Nag;Solid State Technol.,1997

3. Study of chemical mechanical polishing on shallow trench isolation to obtain low defect;Kim;Electrochem. Soc. Proc.,1999

4. Manufacturability of the CMP process;Malik;Thin Solid Films,1995

5. Chemical–mechanical polishing of PECVD silicon nitride;Hu;Thin Solid Films,1996

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