Effects of Growth Temperature on Structural and Electrical Properties of InAlN/GaN Heterostructures Grown by Pulsed Metal Organic Chemical Vapor Deposition onc-Plane Sapphire-Reference-Cited by-同舟云学术

Effects of Growth Temperature on Structural and Electrical Properties of InAlN/GaN Heterostructures Grown by Pulsed Metal Organic Chemical Vapor Deposition onc-Plane Sapphire

Published:2013-08-01 Issue:8S Volume:52 Page:08JB04
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Xue JunShuai,Zhang JinCheng,Hao Yue

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference25 articles.

1. AlGaN/GaN Heterostructure Field-Effect Transistors on 4H-SiC Substrates with Current-Gain Cutoff Frequency of 190 GHz

2. Physical degradation of GaN HEMT devices under high drain bias reliability testing

3. Two-dimensional electron gas density in Al1−xInxN/AlN/GaN heterostructures (0.03≤x≤0.23)

4. Power electronics on InAlN/(In)GaN: Prospect for a record performance

5. Blue lasing at room temperature in high quality factor GaN∕AlInN microdisks with InGaN quantum wells

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4. Demonstration of InAlN/AlGaN high electron mobility transistors with an enhanced breakdown voltage by pulsed metal organic chemical vapor deposition;Applied Physics Letters;2016-01-04

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