Semipolar (202̄1) Single-Quantum-Well Red Light-Emitting Diodes with a Low Forward Voltage-Reference-Cited by-同舟云学术

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Semipolar (202̄1) Single-Quantum-Well Red Light-Emitting Diodes with a Low Forward Voltage

Published:2013-08-01 Issue:8S Volume:52 Page:08JC08
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kawaguchi Yoshinobu,Huang Chia-Yen,Wu Yuh-Renn,Zhao Yuji,DenBaars Steven P.,Nakamura Shuji

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference26 articles.

1. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes

2. Control of Emission Wavelength of GaInN Single Quantum Well, Light Emitting Diodes Grown by Metalorganic Chemical Vapor Deposition in a Split-Flow Reactor

3. Orange–Red Light-Emitting Diodes Based on a Prestrained InGaN–GaN Quantum-Well Epitaxy Structure

4. Influence of Mg-doped barriers on semipolar (202¯1) multiple-quantum-well green light-emitting diodes

5. 740-nm emission from InGaN-based LEDs on c-plane sapphire substrates by MOVPE

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1. Color-Tunable Light-Emitting Diodes Based on Rare Earth Doped Gallium Oxide Films;ACS Applied Electronic Materials;2023-07-18

2. Enhanced light output of Eu, O-codoped GaN caused by reconfiguration of luminescent sites during post-growth thermal annealing;Applied Physics Letters;2023-01-16

3. Comprehensive characterization of low-damaged GaN surface exposed to NH3 plasma toward plasma-induced metalorganic chemical vapor deposition;Applied Surface Science;2022-07

4. Delta InN-InGaN Quantum Wells With AlGaN Interlayers for Long Wavelength Emission;IEEE Journal of Quantum Electronics;2022-04

5. InGaN-based red light-emitting diodes: from traditional to micro-LEDs;Japanese Journal of Applied Physics;2021-12-15

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