Influence of Mg-doped barriers on semipolar (202¯1) multiple-quantum-well green light-emitting diodes-Reference-Cited by-同舟云学术

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Influence of Mg-doped barriers on semipolar (202¯1) multiple-quantum-well green light-emitting diodes

Published:2011-10-03 Issue:14 Volume:99 Page:141114
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Huang Chia-Yen,Yan Qimin,Zhao Yuji,Fujito Kenji,Feezell Daniel,Van de Walle Chris G.,Speck James S.,DenBaars Steven P.,Nakamura Shuji

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3647560

Reference15 articles.

1. Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells

2. Nonpolar and Semipolar Group III Nitride-Based Materials

3. Nonpolar/Semipolar GaN Technology for Violet, Blue, and Green Laser Diodes

4. Polarization fields in wurtzite strained layers grown on () planes

5. Depolarization effects in (112¯2)-oriented InGaN∕GaN quantum well structures

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