Atomic layer etching of silicon nitride using cyclic process with hydrofluorocarbon chemistry-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Atomic layer etching of silicon nitride using cyclic process with hydrofluorocarbon chemistry

Published:2017-05-30 Issue:6S2 Volume:56 Page:06HB07
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ishii Yohei,Okuma Kazumasa,Saldana Tiffany,Maeda Kenji,Negishi Nobuyuki,Manos Jim

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/56/i=6S2/a=06HB07/pdf

Reference27 articles.

1. A 22nm high performance and low-power CMOS technology featuring fully-depleted tri-gate transistors, self-aligned contacts and high density MIM capacitors

2. A 14nm logic technology featuring 2^nd-generation FinFET, air-gapped interconnects, self-aligned double patterning and a 0.0588 µm² SRAM cell size

3. InGaAs Gate-All-Around Nanowire Devices on 300mm Si Substrates

4. III-V Junctionless Gate-All-Around Nanowire MOSFETs for High Linearity Low Power Applications

5. Overview of atomic layer etching in the semiconductor industry

Cited by 45 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Etch-stop mechanisms in plasma-enhanced atomic layer etching of silicon nitride: A molecular dynamics study;Journal of Vacuum Science & Technology A;2024-08-05

2. Review and perspective of dry etching and deposition process modeling of Si and Si dielectric films for advanced CMOS device applications;Japanese Journal of Applied Physics;2024-08-01

3. Molecular dynamics simulations of silicon nitride atomic layer etching with Ar, Kr, and Xe ion irradiations;Japanese Journal of Applied Physics;2024-07-01

4. Selective Atomic Layer Etching for Silicon Device Fabrication;2024 International Conference on Integrated Circuits, Communication, and Computing Systems (ICIC3S);2024-06-08

5. Surface chemical reactions of etch stop prevention in plasma-enhanced atomic layer etching of silicon nitride;Surface and Coatings Technology;2024-02

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3