Reduction reaction analysis of nanoparticle copper oxide for copper direct bonding using formic acid
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/56/i=4S/a=04CC01/pdf
Reference32 articles.
1. Copper Wafer Bonding
2. Microstructure examination of copper wafer bonding
3. Microstructure evolution and abnormal grain growth during copper wafer bonding
4. Low-temperature direct bonding of silicon and silicon dioxide by the surface activation method
5. Wafer direct bonding of compound semiconductors and silicon at room temperature by the surface activated bonding method
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1. Reduction of copper oxide by formic acid in a narrow gap under various conditions;Japanese Journal of Applied Physics;2023-07-01
2. Enhancement of fatigue resistance by recrystallization and grain growth to eliminate bonding interfaces in Cu–Cu joints;Scientific Reports;2022-07-30
3. Electrodeposition of nanocrystalline Cu for Cu-Cu direct bonding;Journal of the Taiwan Institute of Chemical Engineers;2022-03
4. Hydrophilic nanoporous copper surface prepared by modified formic acid vapor treatment;Surfaces and Interfaces;2022-02
5. Low-temperature bonding of surface-activated polyimide to Cu Foil in Pt-catalyzed formic acid atmosphere;Journal of Materials Science: Materials in Electronics;2021-12-01
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