Comparative study of GaN-based ultraviolet LEDs grown on different-sized patterned sapphire substrates with sputtered AlN nucleation layer-Reference-Cited by-同舟云学术

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Comparative study of GaN-based ultraviolet LEDs grown on different-sized patterned sapphire substrates with sputtered AlN nucleation layer

Published:2017-10-13 Issue:11 Volume:56 Page:111001
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Zhou Shengjun,Hu Hongpo,Liu Xingtong,Liu Mengling,Ding Xinghuo,Gui Chengqun,Liu Sheng,Guo L. Jay

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/56/i=11/a=111001/pdf

Reference60 articles.

1. Ultraviolet light-emitting diodes based on group three nitrides

2. Fabrication of High-Output-Power AlGaN/GaN-Based UV-Light-Emitting Diode Using a Ga Droplet Layer

3. High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer

4. Over 1 W record-peak-power operation of a 338 nm AlGaN multiple-quantum-well laser diode on a GaN substrate

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