Hydrothermal growth of n-ZnO films on a patterned p-GaN epilayer and its application in heterojunction light-emitting diodes-Reference-Cited by-同舟云学术

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Hydrothermal growth of n-ZnO films on a patterned p-GaN epilayer and its application in heterojunction light-emitting diodes

Published:2017-02-22 Issue:4S Volume:56 Page:04CH03
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ko Rong-Ming,Wang Shui-Jinn,Chen Ching-Yi,Wu Cheng-Han,Lin Yan-Ru,Lo Hsin-Ming

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/56/i=4S/a=04CH03/pdf

Reference47 articles.

1. Electroluminescence at 375nm from a ZnO∕GaN:Mg∕c-Al2O3 heterojunction light emitting diode

2. Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates

3. Fabrication of a High-Brightness Blue-Light-Emitting Diode Using a ZnO-Nanowire Array Grown on p-GaN Thin Film

4. One-dimensional II–VI nanostructures: Synthesis, properties and optoelectronic applications

5. Optical Properties of ZnO Nanostructures

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1. Pure ultraviolet light-emitting diode based on the p-NiO/i-NiO/n-GaN structure by magnetron sputtering;Optical Materials;2023-11

2. Synthesis of δ-Ta2O5 heteroepitaxial films on YVO4 (100) substrates;Materials Science in Semiconductor Processing;2021-11

3. Progress in Violet Light-Emitting Diodes Based on ZnO/GaN Heterojunction;Electronics;2020-06-13

4. Current Spreading Length and Injection Efficiency in ZnO/GaN-Based Light-Emitting Diodes;IEEE Transactions on Electron Devices;2019-11

5. Performance enhancement of a hydrothermally grown ZnO-based ultraviolet photodetector using substrate transfer and pyramid-like surface texture;Japanese Journal of Applied Physics;2019-03-26

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