Current Spreading Length and Injection Efficiency in ZnO/GaN-Based Light-Emitting Diodes
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/8886611/08856269.pdf?arnumber=8856269
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. ZnO Nanorods on Li-Doped ZnO Thin Films for Efficient p–n Homojunction Light-Emitting Diodes;ACS Applied Nano Materials;2023-08-22
2. Spatially indirect interfacial excitons in n+-ZnO/p-GaN heterostructures;Applied Physics Letters;2023-05-15
3. Chemical vapour deposited ZnO nanowires for detecting ethanol and NO2;Journal of Alloys and Compounds;2022-01
4. Preparation and luminescence of ZnS:Mn nanoparticles on GaN substrates by hydrothermal method;Optik;2021-04
5. Progress in Violet Light-Emitting Diodes Based on ZnO/GaN Heterojunction;Electronics;2020-06-13
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