Maximum usable thickness revisited: Imaging dislocations in Si by modern high-voltage scanning transmission electron microscopy
Author:
Funder
Japan Society for the Promotion of Science
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/56/i=10/a=100304/pdf
Reference22 articles.
1. Metallurgical Investigations with a 500 kV Electron Microscope
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3. Increase in Penetration of Electron Microscope Specimens at High Voltages
4. Some Applications of an Ultra-High Voltage Electron Microscope on Materials Science
5. Voltage Dependence of the Maximum Observable Thickness by Electron Microscopy Up to 3 MV
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