Highly selective chemical mechanical polishing of Si3N4over SiO2using advanced silica abrasive-Reference-Cited by-同舟云学术

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Highly selective chemical mechanical polishing of Si3N4over SiO2using advanced silica abrasive

Published:2017-04-07 Issue:5 Volume:56 Page:056501
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Bae KiHo,Baek Kye Hyun,Kim JaeSeok,Kim Hoyoung,Yoon Bo Un,Kim Jae Jeong

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/56/i=5/a=056501/pdf

Reference27 articles.

1. A wafer-scale material removal rate profile model for copper chemical mechanical planarization

2. Effects of kinematic variables on nonuniformity in chemical mechanical planarization

3. Chemical mechanical planarization of silicon wafers at natural pH for green manufacturing

4. Development of green CMP by slurry reduction through controlling platen coolant temperature

5. Effect of dopants on chemical mechanical polishing of silicon

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study on the development of CeO2 self-sharpening gel abrasive tools and grinding performance on quartz glass;Journal of Mechanical Science and Technology;2024-09

2. The effect of non-ionic surfactants on the removal of cerium oxide particles in STI CMP post cleaning;Materials Science in Semiconductor Processing;2024-06

3. A special electrostatic self-assembly structure of colloidal silica: Improving Chemical Mechanical Polishing performance;Materials Science in Semiconductor Processing;2024-04

4. Development of a pH-independent Post-CMP Cleaning Solution using Phosphoric Acid-based Surfactants for Removal of Ceria Nanoparticles;ECS Journal of Solid State Science and Technology;2023-07-01

5. Development of novel multi-selective slurry with mechanically driven etching for through silicon via chemical mechanical polishing;Materials Science in Semiconductor Processing;2022-12

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