Theoretical study on effects of exposure pattern width on line edge roughness and stochastic defect generation in fabrication of 16-nm-half-pitch line-and-space patterns by electron beam lithography-Reference-Cited by-同舟云学术

Theoretical study on effects of exposure pattern width on line edge roughness and stochastic defect generation in fabrication of 16-nm-half-pitch line-and-space patterns by electron beam lithography

Published:2017-10-12 Issue:11 Volume:56 Page:116501
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kozawa Takahiro,Tamura Takao

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/56/i=11/a=116501/pdf

Reference28 articles.

1. High performance mask fabrication process for the next-generation mask production

2. EBM-9000: EB mask writer for product mask fabrication of 16nm half-pitch generation and beyond

3. Pattern noise in electron beam resists: PMMA, KRS-XE, TOK, HSQ

4. Shot noise models for sequential processes and the role of lateral mixing

5. A review of line edge roughness and surface nanotexture resulting from patterning processes

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