Resist thickness dependence of line width roughness of chemically amplified resists used for electron beam lithography
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.35848/1347-4065/ab9fde/pdf
Reference44 articles.
1. Mechanism of Resist Pattern Collapse during Development Process
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