Electrical characteristics of nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite films prepared by coaxial arc plasma deposition-Reference-Cited by-同舟云学术

Electrical characteristics of nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite films prepared by coaxial arc plasma deposition

Published:2015-08-17 Issue:9 Volume:8 Page:095101
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Zkria Abdelrahman,Gima Hiroki,Shaban Mahmoud,Yoshitake Tsuyoshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/8/i=9/a=095101/pdf

Reference17 articles.

1. Low-temperature spectroscopic study ofn-type diamond

2. Growth and characterization of phosphorous doped {111} homoepitaxial diamond thin films

3. Tight-binding molecular-dynamics simulation of impurities in ultrananocrystalline diamond grain boundaries

4. n-type conductivity in ultrananocrystalline diamond films

5. Synthesis and characterization of highly-conducting nitrogen-doped ultrananocrystalline diamond films

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