Synthesis and characterization of highly-conducting nitrogen-doped ultrananocrystalline diamond films-Reference-Cited by-同舟云学术

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Synthesis and characterization of highly-conducting nitrogen-doped ultrananocrystalline diamond films

Published:2001-09-03 Issue:10 Volume:79 Page:1441-1443
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Bhattacharyya S.,Auciello O.,Birrell J.,Carlisle J. A.,Curtiss L. A.,Goyette A. N.,Gruen D. M.,Krauss A. R.,Schlueter J.,Sumant A.,Zapol P.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1400761

Reference27 articles.

1. Efficient n-type doping of diamond using surfactant-mediated epitaxial growth

2. n-type semiconducting diamond by means of oxygen-ion implantation

3. Sulfur: A donor dopant forn-type diamond semiconductors

4. Low-temperature spectroscopic study ofn-type diamond

5. Growth and characterization of phosphorous doped {111} homoepitaxial diamond thin films

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