n-type semiconducting diamond by means of oxygen-ion implantation
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.61.7191/fulltext
Reference20 articles.
1. Role of Phonons in the Oscillatory Photoconductivity Spectrum of Semiconducting Diamond
2. On the substitutional nitrogen donor in diamond
3. Growth and characterization of phosphorous doped {111} homoepitaxial diamond thin films
4. Ion-implanted n-type diamond: electrical evidence
5. Doping of diamond by the diffusion of interstitial atoms into layers containing a low density of vacancies
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