Doping of diamond by the diffusion of interstitial atoms into layers containing a low density of vacancies
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials
Reference32 articles.
1. Semiconducting diamond
2. Ion implantation into diamond
3. Ion Implantation in Diamond;Dresselhaus,1992
4. Ion-implanted structures and doped layers in diamond
5. Materials modification: doping of diamond by ion implantation
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1. High-pressure and high-temperature annealing as an activation method for ion-implanted dopants in diamond;Applied Physics Letters;2007-03-19
2. Elementary excitations in isotope-mixed crystals;Physics Reports;2005-04
3. The diamond vacuum interface: II. Electron extraction from n-type diamond: evidence for superconduction at room temperature;Semiconductor Science and Technology;2003-02-10
4. Ion implantation of diamond for electronic applications;Semiconductor Science and Technology;2003-02-10
5. Chapter 3 Doping diamond by ion-implantation;Thin-Film Diamond I;2003
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