High-pressure and high-temperature annealing as an activation method for ion-implanted dopants in diamond
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2715034
Reference14 articles.
1. 2 W∕mm output power density at 1 GHz for diamond FETs
2. Diamond FET using high-quality polycrystalline diamond with f/sub T/ of 45 GHz and f/sub max/ of 120 GHz
3. Formation of delta-doped, buried conducting layers in diamond, by high-energy, B-ion implantation
4. Boron implantation/in situ annealing procedure for optimal p ‐type properties of diamond
5. Activation of boron-dopant atoms in ion-implanted diamonds
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