Characterization of SiNx/AlN passivation stack with epitaxial AlN grown on AlGaN/GaN heterojunctions by plasma-enhanced atomic layer deposition
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/8/i=6/a=064101/pdf
Reference18 articles.
1. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
2. 1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance
3. Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride
4. Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film
5. Mechanism of PEALD-Grown AlN Passivation for AlGaN/GaN HEMTs: Compensation of Interface Traps by Polarization Charges
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3. Current collapse suppression in AlGaN/GaN HEMTs using dual-layer SiNx stressor passivation;Applied Physics Letters;2023-06-05
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5. The effect of barrier layers on 2D electron effective mass in Al0.3Ga0.7N/AlN/GaN heterostructures;Journal of Physics: Condensed Matter;2021-05-19
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