Growth of bulk GaN crystals by the Na-flux point seed technique
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/53/i=5S1/a=05FA06/pdf
Reference23 articles.
1. 531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates
2. Demonstration of Blue and Green GaN-Based Vertical-Cavity Surface-Emitting Lasers by Current Injection at Room Temperature
3. High-Breakdown-Voltage and Low-Specific-on-Resistance GaN p–n Junction Diodes on Free-Standing GaN Substrates Fabricated Through Low-Damage Field-Plate Process
4. Bulk GaN crystals grown by HVPE
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1. Improved midgap recombination lifetimes in GaN crystals grown by the low-pressure acidic ammonothermal method;Applied Physics Letters;2024-04-29
2. Analysis of GaN crystal growth mechanism in liquid-phase epitaxial Na-flux method;Journal of Materials Science;2024-04-12
3. Role of carbon in n-type bulk GaN crystals;Journal of Crystal Growth;2024-04
4. Effects of Solution Height on the Growth of GaN Crystals in the Na-Flux Liquid-Phase Method;Crystal Growth & Design;2024-04-01
5. Research Progress in Liquid Phase Growth of GaN Crystals;Chemistry – A European Journal;2024-01-12
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