Effects of Solution Height on the Growth of GaN Crystals in the Na-Flux Liquid-Phase Method-Reference-Cited by-同舟云学术

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Effects of Solution Height on the Growth of GaN Crystals in the Na-Flux Liquid-Phase Method

Published:2024-04-01 Issue:8 Volume:24 Page:3410-3418
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Huang Gemeng¹^ORCID,Feng Maorong¹,Yang Chen¹,Ma Ming¹,Xia Song¹,Fan Shiji¹,Li Zhenrong¹^ORCID

Affiliation:

1. Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic and Information Engineering, Xi’an Jiao Tong University, Xi’an 710049, People’s Republic of China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.4c00118

Reference37 articles.

1. Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

2. III–nitrides: Growth, characterization, and properties

3. Gallium nitride devices for power electronic applications

4. Light emitting diodes (LEDs) in fluorescence-based analytical applications: a review

5. GaN Substrates—Progress, Status, and Prospects

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. New Flux-Excess Aid Technology in the Na-Flux Liquid-Phase Epitaxial Growth of GaN Crystals;Crystal Growth & Design;2024-08-22

2. Studying the effect of temperature and pressure on GaN crystals via the Na-flux method;CrystEngComm;2024

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