Perpendicular magnetic tunnel junctions with strong antiferromagnetic interlayer exchange coupling at first oscillation peak
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/8/i=8/a=083003/pdf
Reference28 articles.
1. Lower-current and fast switching of a perpendicular TMR for high speed and high density spin-transfer-torque MRAM
2. High efficient spin transfer torque writing on perpendicular magnetic tunnel junctions for high density MRAMs
3. Spin torque switching of 20 nm magnetic tunnel junctions with perpendicular anisotropy
4. Impact of ultra low power and fast write operation of advanced perpendicular MTJ on power reduction for high-performance mobile CPU
5. Progress of STT-MRAM technology and the effect on normally-off computing systems
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