High efficient spin transfer torque writing on perpendicular magnetic tunnel junctions for high density MRAMs-Reference-Cited by-同舟云学术

High efficient spin transfer torque writing on perpendicular magnetic tunnel junctions for high density MRAMs

Published:2010-01 Issue:1 Volume:10 Page:e87-e89
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Yoda Hiroaki,Kishi Tatsuya,Nagase Toshihiko,Yoshikawa Masatoshi,Nishiyama Katsuya,Kitagawa Eiji,Daibou Tadaomi,Amano Minoru,Shimomura Naoharu,Takahashi Shigeki,Kai Tadashi,Nakayama Masahiko,Aikawa Hisanori,Ikegawa Sumio,Nagamine Makoto,Ozeki Junichi,Mizukami Shigemi,Oogane Mikihiko,Ando Yasuo,Yuasa Shinji,Yakushiji Kei,Kubota Hitoshi,Suzuki Yoshishige,Nakatani Yoshinobu,Miyazaki Terunobu,Ando Koji

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference15 articles.

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3. Observation of spin-transfer switching in deep submicron-sized and low-resistance magnetic tunnel junctions

4. Yoda et al., in: 7th IWFIPT, Session III c.

5. Spin transfer switching in TbCoFe∕CoFeB∕MgO∕CoFeB∕TbCoFe magnetic tunnel junctions with perpendicular magnetic anisotropy

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