Carrier confinement observed at modulation-doped β-(Al x Ga1− x )2O3/Ga2O3 heterojunction interface-Reference-Cited by-同舟云学术

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Carrier confinement observed at modulation-doped β-(Al x Ga1− x )2O3/Ga2O3 heterojunction interface

Published:2017-02-24 Issue:3 Volume:10 Page:035701
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Oshima Takayoshi,Kato Yuji,Kawano Naoto,Kuramata Akito,Yamakoshi Shigenobu,Fujita Shizuo,Oishi Toshiyuki,Kasu Makoto

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/10/i=3/a=035701/pdf

Reference22 articles.

1. Wide-bandgap semiconductor materials: For their full bloom

2. Recent progress in Ga2O3power devices

3. Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 ( 2¯01)

4. Valence band ordering in β-Ga2O3studied by polarized transmittance and reflectance spectroscopy

5. Epitaxial growth and electric properties of γ-Al2O3(110) films on β-Ga2O3(010) substrates

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