Vertical GaN merged PiN Schottky diode with a breakdown voltage of 2 kV
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/10/i=6/a=061003/pdf
Reference22 articles.
1. High-Breakdown-Voltage GaN Vertical Schottky Barrier Diodes with Field Plate Structure
2. Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates
3. Novel GaN trench MIS barrier Schottky rectifiers with implanted field rings
4. High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth
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1. A simulation study of vertical Ga2O3 Schottky barrier diodes using field plate termination;Japanese Journal of Applied Physics;2024-01-23
2. Demonstration of avalanche capability in 800 V vertical GaN-on-silicon diodes;Applied Physics Express;2023-12-01
3. Design and fabrication of vertical GaN junction barrier Schottky rectifiers using Mg ion implantation;Japanese Journal of Applied Physics;2023-09-15
4. 1.2-kV Vertical GaN PIN Rectifier With Ion-Implanted Floating Guard Rings;IEEE Transactions on Electron Devices;2023-09
5. Improved reverse-bias breakdown behavior in fully-vertical GaN-on-Si Schottky barrier diodes with a thin AlN layer within the GaN drift layer;Semiconductor Science and Technology;2023-08-03
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