Novel GaN trench MIS barrier Schottky rectifiers with implanted field rings-Reference-Cited by-同舟云学术

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Novel GaN trench MIS barrier Schottky rectifiers with implanted field rings

Published:2016-12 Issue: Volume: Page:
ISSN:
Container-title:2016 IEEE International Electron Devices Meeting (IEDM)
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Author:

Zhang Y.,Sun M.,Liu Z.,Piedra D.,Pan M.,Gao X.,Lin Y.,Zubair A.,Yu L.,Palacios T.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7824662/7838021/07838386.pdf?arnumber=7838386

Cited by 65 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaN Vertical MOSFETs With Monolithically Integrated Freewheeling Merged pn-Schottky Diodes (MPS-MOS) for 1.2-kV Applications;IEEE Transactions on Electron Devices;2024-08

2. Polarization-Enhanced GaN Schottky Barrier Diodes: Ultra-Thin InGaN for High Breakdown Voltage and Low R_on;IEEE Electron Device Letters;2024-07

3. From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices;Journal of Physics: Materials;2024-03-08

4. Post-trench restoration for vertical GaN power devices;Applied Physics Letters;2024-02-26

5. Ultra-low reverse leakage in large area kilo-volt class β-Ga2O3 trench Schottky barrier diode with high-k dielectric RESURF;Applied Physics Letters;2023-12-11

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