Comparison of AlGaN p–i–n ultraviolet avalanche photodiodes grown on free-standing GaN and sapphire substrates-Reference-Cited by-同舟云学术

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Comparison of AlGaN p–i–n ultraviolet avalanche photodiodes grown on free-standing GaN and sapphire substrates

Published:2015-11-09 Issue:12 Volume:8 Page:122202
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Kim Jeomoh,Ji Mi-Hee,Detchprohm Theeradetch,Dupuis Russell D.,Ryou Jae-Hyun,Sood Ashok K.,Dhar Nibir D.,Lewis Jay

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/8/i=12/a=122202/pdf

Reference18 articles.

1. Back-illuminated separate absorption and multiplication GaN avalanche photodiodes

2. Back-illuminated separate absorption and multiplication AlGaN solar-blind avalanche photodiodes

3. Study of gain and photoresponse characteristics for back-illuminated separate absorption and multiplication GaN avalanche photodiodes

4. heterostructure grown by metalorganic vapor phase epitaxy

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mechanisms Affecting the Anomalous Responsivity of Back‐Illuminated p–i–n AlGaN Solar‐Blind Photodetectors;physica status solidi (a);2024-08-18

2. High-Performance Al₀.₁Ga₀.₉N p-i-n Ultraviolet Avalanche Photodiodes With Ultra-Shallow Bevel Edge Terminations;IEEE Electron Device Letters;2024-05

3. Al_0.1Ga_0.9N p-i-n ultraviolet avalanche photodiodes with suppressed surface leakage current and uniform avalanche breakdown;Optics Express;2023-10-23

4. Ultraviolet Photodetectors: From Photocathodes to Low-Dimensional Solids;Sensors;2023-05-02

5. Al_0.1Ga_0.9N p-i-n Ultraviolet Avalanche Photodiodes With Avalanche Gain Over 10⁶;IEEE Electron Device Letters;2022-09

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