Study of gain and photoresponse characteristics for back-illuminated separate absorption and multiplication GaN avalanche photodiodes
Author:
Funder
NNSFC
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4861148
Reference30 articles.
1. Avalanche multiplication in AlGaN based solar-blind photodetectors
2. Photoresponse study of visible blind GaN/AlGaN p-i-n ultraviolet photodetector
3. Geiger-Mode Operation of GaN Avalanche Photodiodes Grown on GaN Substrates
4. GaN ultraviolet avalanche photodiodes with optical gain greater than 1000 grown on GaN substrates by metal-organic chemical vapor deposition
5. Dependence of dark current and photoresponse characteristics on polarization charge density for GaN-based avalanche photodiodes
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