Abstract
The performance of long-wave infrared (LWIR) x = 0.22 HgCdTe avalanche photodiodes (APDs) was presented. The dark current-voltage characteristics at temperatures 200 K, 230 K, and 300 K were measured and numerically simulated. Theoretical modeling was performed by the numerical Apsys platform (Crosslight). The effects of the tunneling currents and impact ionization in HgCdTe APDs were calculated. Dark currents exhibit peculiar features which were observed experimentally. The proper agreement between the theoretical and experimental characteristics allowed to determine the material parameters of the absorber was reached. The effect of the multiplication layer profile on the detector characteristics was observed but was found to be insignificant.
Publisher
Polish Academy of Sciences Chancellery