Direct observation of inversion capacitance in p-type diamond MOS capacitors with an electron injection layer-Reference-Cited by-同舟云学术

Direct observation of inversion capacitance in p-type diamond MOS capacitors with an electron injection layer

Published:2018-02-16 Issue:4S Volume:57 Page:04FR01
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Matsumoto Tsubasa,Kato Hiromitsu,Makino Toshiharu,Ogura Masahiko,Takeuchi Daisuke,Yamasaki Satoshi,Imura Masataka,Ueda Akihiro,Inokuma Takao,Tokuda Norio

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/57/i=4S/a=04FR01/pdf

Reference34 articles.

1. Time-resolved cyclotron resonance on dislocation-free HPHT diamond

2. High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond

3. Diamond Metal–Semiconductor Field-Effect Transistor With Breakdown Voltage Over 1.5 kV

4. 600 V Diamond Junction Field-Effect Transistors Operated at 200$^{\circ}{\rm C}$

5. Epitaxial Growth of AlGaN/GaN High-Electron Mobility Transistor Structure on Diamond (111) Surface

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Selectively buried growth of heavily B doped diamond layers with step-free surfaces in N doped diamond (1 1 1) by homoepitaxial lateral growth;Applied Surface Science;2022-08

2. Impact of nitrogen doping on homoepitaxial diamond (111) growth;Diamond and Related Materials;2022-05

3. Forward bias capacitance investigation as a powerful tool to monitor graphene/silicon interfaces;Solar Energy;2021-09

4. Inversion-type p-channel diamond MOSFET issues;Journal of Materials Research;2021-08-04

5. Inversion channel MOSFET on heteroepitaxially grown free-standing diamond;Carbon;2021-04