Development of oxide thin-film transistor using all spin-on-glass insulators with addition of hydrogen peroxide: Buffer, gate insulator, and interlayer dielectric-Reference-Cited by-同舟云学术

Development of oxide thin-film transistor using all spin-on-glass insulators with addition of hydrogen peroxide: Buffer, gate insulator, and interlayer dielectric

Published:2018-11-09 Issue:12 Volume:57 Page:126503
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hwang Sang Ho,Baek Yeong Jo,Hong Min Taek,Lee Sang Min,Han Ye Lin,Moon Dong Sung,Yun Eui-Jung,Bae Byung Seong^ORCID

Funder

National Research Foundation of Korea

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/57/i=12/a=126503/pdf

Reference29 articles.

1. Advanced technologies for UHD curved OLED TV

2. Back-channel-etched thin-film transistor using c -axis-aligned crystal In-Ga-Zn oxide

3. Power saving through state retention in IGZO-TFT AMOLED displays for wearable applications

4. Environment-dependent metastability of passivation-free indium zinc oxide thin film transistor after gate bias stress

5. Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates

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