Back-channel-etched thin-film transistor using c -axis-aligned crystal In-Ga-Zn oxide-Reference-Cited by-同舟云学术

Back-channel-etched thin-film transistor using c -axis-aligned crystal In-Ga-Zn oxide

Published:2014-01 Issue:1 Volume:22 Page:55-67
ISSN:1071-0922
Container-title:Journal of the Society for Information Display
language:en
Short-container-title:Jnl Soc Info Display

Author:

Yamazaki Shunpei¹,Hirohashi Takuya¹,Takahashi Masahiro¹,Adachi Shunsuke¹,Tsubuku Masashi¹,Koezuka Junichi²,Okazaki Kenichi²,Kanzaki Yohsuke³,Matsukizono Hiroshi³,Kaneko Seiji³,Mori Shigeyasu³,Matsuo Takuya³

Affiliation:

1. Semiconductor Energy Laboratory Co., Ltd; 398 Hase Atsugi-shi Kanagawa 243-0036 Japan

2. Advanced Film Device Inc.; 161-2 Masuzuka, Tsuga-machi Tochigi-shi Tochigi 328-0114 Japan

3. Sharp Corporation; 2613-1, Ichinomoto-cho Tenri Nara 632-8567 Japan

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/jsid.211/fullpdf

Reference25 articles.

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2. Syntheses and single-crystal data of homologous compounds In2O3(ZnO)m (m = 3, 4, and 5), InGaO3(ZnO)3, and Ga2O3(ZnO)m (m = 7, 8, 9, and 16) in the In2O3-ZnGa2O4-ZnO system;Kimizuka;J. Solid State Chem.,1995

3. The phase relations in the In2O3-Ga2ZnO4-ZnO System at 1350 °C;Nakamura;J. Solid State Chem.,1991

4. Modulated structures of homologous compounds InMO3(ZnO)m (M = In, Ga; m = integer) described by four-dimensional superspace group;Li;J. Solid State Chem.,1998

5. Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor;Nomura;Science,2003

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