Characterization of interfacial morphology of low temperature, low pressure Au–Au thermocompression bonding-Reference-Cited by-同舟云学术

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Characterization of interfacial morphology of low temperature, low pressure Au–Au thermocompression bonding

Published:2017-12-27 Issue:2S1 Volume:57 Page:02BC03
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Goorsky Mark S.,Schjølberg-Henriksen Kari,Beekley Brett,Bai Tingyu,Mani Karthick,Ambhore Pranav,Bajwa Adeel,Malik Nishant,Iyer Subramanian S.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/57/i=2S1/a=02BC03/pdf

Reference29 articles.

1. Pixel-Parallel 3-D Integrated CMOS Image Sensors With Pulse Frequency Modulation A/D Converters Developed by Direct Bonding of SOI Layers

2. Miniature, low-cost, 200 mW, infrared thermal emitter sealed by wafer-level bonding

3. Modeling and Integration Phenomena of metal-metal direct bonding technology

4. Impact of SiO2on Al–Al thermocompression wafer bonding

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4. Effect of Au Film Thickness and Surface Roughness on Room-Temperature Wafer Bonding and Wafer-Scale Vacuum Sealing by Au-Au Surface Activated Bonding;Micromachines;2020-04-27

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