Curvature evolution of 200 mm diameter GaN-on-insulator wafer fabricated through metalorganic chemical vapor deposition and bonding-Reference-Cited by-同舟云学术

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Curvature evolution of 200 mm diameter GaN-on-insulator wafer fabricated through metalorganic chemical vapor deposition and bonding

Published:2018-04-17 Issue:5 Volume:57 Page:051002
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Zhang Li,Lee Kwang Hong,Kadir Abdul,Wang Yue,Lee Kenneth E.,Tan Chuan Seng,Chua Soo Jin,Fitzgerald Eugene A.

Funder

National Research Foundation Singapore

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/57/i=5/a=051002/pdf

Reference17 articles.

1. (Invited) Novel Integrated Circuit Platforms Employing Monolithic Silicon CMOS + GaN Devices

2. (Invited) SiGe and III-V Materials and Devices: New HEMT and LED Elements in 0.18-Micron CMOS Process and Design

3. Metamorphic transistors: Building blocks for hetero-integrated circuits

4. N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of AlGaN/GaN high electron mobility transistors on Silicon (111) substrates employing multi-stacked strained layer superlattice structures;Superlattices and Microstructures;2020-11

2. High-frequency AlGaN/GaN T-gate HEMTs on extreme low resistivity silicon substrates;Japanese Journal of Applied Physics;2020-02-28

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