High-frequency AlGaN/GaN T-gate HEMTs on extreme low resistivity silicon substrates
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.35848/1347-4065/ab70a5/pdf
Reference37 articles.
1. High-$f_{{\rm MAX}}$ High Johnson's Figure-of-Merit 0.2- $\mu{\rm m}$ Gate AlGaN/GaN HEMTs on Silicon Substrate With ${\rm AlN}/{\rm SiN}_{{\rm x}}$ Passivation
2. AlGaN/GaN HEMTs on Silicon Substrate With 206-GHz $F_{ \rm MAX}$
3. Enhanced Breakdown Voltage With High Johnson's Figure-of-Merit in 0.3-$\mu{\rm m}$ T-gate AlGaN/GaN HEMTs on Silicon by $({\rm NH}_{4})_{2}{\rm S}_{x}$ Treatment
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. GaN HEMTs on low resistivity Si substrates with thick buffer layers for RF signal amplification and power conversion;AIP Advances;2022-04-01
2. A new design for improving the performance of AlGaN/GaN high-electron-mobility transistors;Journal of Computational Electronics;2021-07-10
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