Critical Temperature Programs for Surface Carbonization of Si(111) and Their Effects on 3C-SiC Film Growth-Reference-Cited by-同舟云学术

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Critical Temperature Programs for Surface Carbonization of Si(111) and Their Effects on 3C-SiC Film Growth

Published:2013-08-01 Issue:8R Volume:52 Page:085502
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Nguyen Nam Giang,Liu Chie-Sheng,Hu Ming-Shien,Hong Lu-Sheng

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference25 articles.

1. 3C-SiC hetero-epitaxial growth on undulant Si(001) substrate

2. Effect of carbonization on the growth of 3C‐SiC on Si (111) by silacyclobutane

3. Heteroepitaxial Growth of SiC on Si(100) and (111) by Chemical Vapor Deposition Using Trimethylsilane

4. Epitaxial growth of beta -SiC on Si by RTCVD with C/sub 3/H/sub 8/ and SiH/sub 4/

5. Characterization and growth of SiC epilayers on Si substrates

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Heteroepitaxial growth of thick 3C‐SiC (110) films by Laser CVD;Journal of the American Ceramic Society;2019-02-11

2. High-speed heteroepitaxial growth of 3C-SiC (111) thick films on Si (110) by laser chemical vapor deposition;Journal of the American Ceramic Society;2017-10-23

3. 2H-silicon carbide epitaxial growth on c-plane sapphire substrate using an AlN buffer layer and effects of surface pre-treatments;Electronic Materials Letters;2015-05

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